EUV light wavelength
Resolution
Projection optics
Wafers per hour
At dose: 30 mJ/cm2
Key features & benefits
The TWINSCAN NXE:3800E is the successor to the TWINSCAN NXE:3600D. It combines imaging and overlay improvements with a big step up in productivity.
The NXE:3800E is designed to cost-efficiently support volume production of 2 nm Logic nodes and leading-edge DRAM nodes. Its patterning capabilities are complementary to those provided by our immersion lithography systems.
A new bottom module was key to boosting productivity in the NXE:3800E. The module, which is common with the 0.55 NA EXE platform, includes a new wafer handler, faster wafer stages and other components needed to support increased throughput. A higher-power source, another component shared with the EXE platform, also contributed to the system’s productivity.
The NXE:3800E optimizes imaging and overlay performance for each exposed wafer by combining in-situ measurements with per-wafer correction capability of the optics and stages. Better stage alignment further supports the improved overlay. And by mitigating mirror heating, the system is able to offer imaging with reduced aberrations and increased stability.
